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- 🚀 Gate.io #Launchpad# Initial Offering: #PFVS#
🏆 Commit #USDT# to Share 10,000,000 #PFVS# . The More You Commit, the More $PFVS You Receive!
📅 Duration: 03:00 AM, May 13th - 12:00 PM, May 16th (UTC)
💎 Commit USDT Now: https://www.gate.io/launchpad/2300
Learn More: https://www.gate.io/announcements/article/44878
#GateioLaunchpad#
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⏰ Click the red packet icon as soon as the countdown ends. First come, first served.
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- #Will BTC Hit a New High?#
BTC has broken past $100,000 and is now consolidating near its peak. What’s your outlook on the next move? With bullish sentiment on the rise, could BTC reach a new all-time high?
#Crypto Market Rebounds#
The crypto market is rallying across the board — altcoins are gaining momentum, and Memecoins are heating up! 🔥MOODENG is up over 100%, while PNUT and VIRTUAL have each gained more than 45%. The total crypto market cap has now exceeded $3.22 trillion!
What’s next for the market? Which rebound tokens are you most bullish on?
Post your insights and trading strategie
- 👩 Gate Post User Experience Survey is Now Live! 💻
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⏰ Event Period: May 8, 8:00 AM – May 18, 6:00 PM (UTC)
Open Source securities: Near-storage computing is expected to become a key trend in future technological development
Jinshi data news on February 26th, Open Source Securities pointed out that with the increasing demand for AI Computing Power, the mismatch between the storage and computing performance of the von Neumann architecture is becoming increasingly prominent, and the integrated storage and computing technology is emerging. Near-memory computing effectively integrates computing and storage through 2.5D and 3D stacking technology, improves memory bandwidth, and reduces access latency, becoming the mainstream solution to enhance chip performance. Represented by HBM and CUBE solutions, it can be widely used in high-performance computing and edge devices. With the popularization of AI terminals and the accelerated demand for Computing Power, near-memory computing is expected to become a key trend in future technological development.